Semiconductive device having improved copper density for package-on-package applications
AssigneeTexas Instruments Incorporated
InventorsMasazumi Amagai, Kenji Masumoto
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Abstract
In one aspect, the invention provides a semiconductor device that comprises a semiconductor device packaging substrate core. A first interconnect structure is located within a mold region and on a die side of the substrate core and has a first conductive metal density associated therewith. A second interconnect structure is located within the mold region and on a solder joint side of the substrate core and has a second conductive metal density associated therewith, wherein the second conductive metal density within the mold region is about equal to or less than the first conductive metal density within the mold region.
Claims11
A semiconductor device, comprising:
- a semiconductor chip affixed to a middle region of a substrate surface;
- a packing mold disposed within a mold region boundary enclosing the semiconductor chip and adhering to a portion of the substrate surface;
- the substrate having a core layer and a first metal pattern of a metal film on a first side of the core layer within a first boundary coextending the mold region boundary and a second metal pattern of a metal film on a second and opposite side of the core layer within a second boundary coextending the mold region boundary;
- and
- the first metal pattern having a first metal density, the second metal pattern having a second metal density lower than the first metal density.
A method of manufacturing a semiconductor device, comprising:
- defining a mold region boundary;
- forming a substrate having an insulating core layer and a first side for affixing semiconductor chips;
- forming a first metal pattern of a metal film on the first side of the core layer within the substrate circumscribed by the mold region boundary and having a first metal density;
- and
- forming a second metal pattern of a metal film on a second and opposite side of the core layer within the substrate circumscribed by the mold region boundary and having a second metal density lower than the first metal density.
Dependencies are inferred from the claim text.