Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
Drawings
Claims39
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition including a ketone compound, a first polar aprotic solvent being at least one of an ether compound and an ester compound, and a second polar aprotic solvent being at least one of a sulfur-containing compound and a nitrogen-containing compound;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin.
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition including a ketone compound and a polar aprotic solvent being at least one of an ether compound and an ester compound;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin.
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition including a ketone compound and a polar aprotic solvent being at least one of a sulfur-containing compound and a nitrogen-containing compound;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin.
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition including a first polar aprotic solvent being at least one of an ether compound and an ester compound, and a second polar aprotic solvent being at least one of a sulfur-containing compound and a nitrogen-containing compound;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin.
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition consisting essentially of a ketone compound, a first polar aprotic solvent and a second polar aprotic solvent;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin,
wherein the first polar aprotic solvent is at least one of an ether compound and an ester compound, and the second polar aprotic solvent is at least one of a sulfur-containing compound and a nitrogen-containing compound.
1 more element
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition consisting essentially of a ketone compound and a second polar aprotic solvent;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin,
wherein the second polar aprotic solvent is at least one of a sulfur-containing compound and a nitrogen-containing compound.
1 more element
A method of removing photoresist comprising:
preparing a composition for removing photoresist, the composition consisting essentially of a first polar aprotic solvent and a second polar aprotic solvent;
and
selectively removing a novolac-based photoresist from an object on which the novolac-based photoresist and a structure including an acryl-based resin are located by contacting the object with the composition while suppressing damage to the structure including the acryl-based resin,
wherein the first polar aprotic solvent is at least one of an ether compound and an ester compound, and the second polar aprotic solvent is at least one of a sulfur-containing compound and a nitrogen-containing compound.
1 more element
A method of manufacturing a semiconductor device comprising:
forming a structure on a substrate, the structure including an acryl-based resin;
forming a photoresist pattern including a novolac-based photoresist on the substrate, the photoresist pattern exposing a portion of the structure;
and
selectively removing the photoresist pattern from the substrate by applying a composition for removing photoresist while suppressing damage to the structure including the acryl-based resin, the composition including a ketone compound, a first polar aprotic solvent being at least one of an ether compound and an ester compound, and a second polar aprotic solvent being at least one of a sulfur-containing compound and a nitrogen-containing compound.
1 more element
A method of manufacturing a semiconductor device comprising:
forming a structure on a substrate, the structure including an acryl-based resin;
forming a photoresist pattern including a novolac-based photoresist on the substrate, the photoresist pattern exposing a portion of the structure;
and
selectively removing the photoresist pattern from the substrate by applying a composition for removing photoresist while suppressing damage to the structure including the acryl-based resin, the composition including a ketone compound and a first polar aprotic solvent having at least one of an ether compound and an ester compound.
1 more element
A method of manufacturing a semiconductor device comprising:
forming a structure on a substrate, the structure including an acryl-based resin;
forming a photoresist pattern including a novolac-based photoresist on the substrate, the photoresist pattern exposing a portion of the structure;
and
selectively removing the photoresist pattern from the substrate by applying a composition for removing photoresist while suppressing damage to the structure including the acryl-based resin, the composition including a ketone compound and a second polar aprotic solvent having at least one of a sulfur-containing compound and a nitrogen-containing compound.
1 more element
A method of manufacturing a semiconductor device comprising:
forming a structure on a substrate, the structure including an acryl-based resin;
forming a photoresist pattern including a novolac-based photoresist on the substrate, the photoresist pattern exposing a portion of the structure;
and
selectively removing the photoresist pattern from the substrate by applying a composition for removing photoresist while suppressing damage to the structure including the acryl-based resin, the composition including a first polar aprotic solvent being at least one of an ether compound and an ester compound and a second polar aprotic solvent being at least one of a sulfur-containing compound and a nitrogen-containing compound.
13 Jan 2029Estimated · howhide20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 1,134 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.
About 2 years 3 months of term left · ends 13 Jan 2029 (estimated)
Priority, Korea6 Dec 2004
Filed6 Dec 2005
Granted16 Mar 2010
Today12 Oct 2026
Term ends13 Jan 2029
Priority, Korea6 Dec 2004
Granted16 Mar 2010
Term ends13 Jan 2029
Priority claimedKR 10-2004-0101679
Application filedUS 11/296,000
Assigned to Samsung Electroncs Co., Ltd.assignment of assignor's interest
PublishedUS 2006/0122084 A1
GrantedUS 7,678,751 B2
TodayWithin its term
Term endsEstimated, includes 1,134 days of adjustment
Description10,298 words
Summary1,633 words
#This application claims priority under 35 USC § 119 to Korean Patent Application No. 2004-101679 filed on Dec. 6, 2004, the contents of which are herein incorporated by reference in its entirety.
#The present invention relates to a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using the same.
Brief description of the drawings3 figures
#The above and other features and advantages of the present invention will become more apparent by describing in detailed example embodiments thereof with reference to the accompanying drawings, in which:
#FIGS. 1 to 4 are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention;
#FIGS. 5 to 16 are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with a further embodiment of the present invention;
Detailed description8,556 words
#The invention is described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.
#It will be understood that when an element or layer is referred to as being “on,” “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like numbers refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
#It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.