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AssigneeApplied Materials, Inc.
InventorsThai Cheng Chua, Steven Hung, Patricia M. Liu, Tatsuya Sato, Alex M. Paterson, Valentin Todorov, John P. Holland
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The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.
A method of forming a semiconductor device, comprising:
A method of forming a semiconductor device, comprising:
A method of forming a semiconductor device, comprising:
Dependencies are inferred from the claim text.