Method of forming low-temperature conformal dielectric films
AssigneeNovellus Systems, Inc.
InventorsBrian Lu, Wai-Fan Yau, Collin Mui, Bunsen Nie, Raihan Tarafdar
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Abstract
A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.
Claims19
A method of forming a dielectric film, the method comprising:
- (a) exposing a substrate surface to a catalyst to form an adsorbed layer on the substrate surface, wherein said catalyst is a metal-free catalyst selected from the group consisting of alkyl/aryl boronic acids, sulphonic acids, alkylamines, arylamines, ammonium salts, alkyl/dialkyl phosphates, phosphonic acids, and phosphonitrile compounds;
- (b) exposing the substrate surface to a silicon-containing precursor gas;
- and
- (c) exposing the substrate surface to a reaction accelerator, wherein the reaction accelerator is
- and wherein R1, R2, R3, R4 are independently selected from the group consisting of halogens, alkyls, alkoxy groups, halogen-containing alkanes, alkenes, hydrohalogen acids, ammonia, alcohol, water, organic acids, sulfuric acid, and phosphate acid groups;
- wherein exposure of the substrate to the reaction accelerator increases the film formation rate.
A method of forming a dielectric film, the method comprising:
- (a) exposing a substrate surface to a catalyst to form an adsorbed layer on the substrate surface, wherein said catalyst is a metal-free catalyst selected from the group consisting of alkyl/aryl boronic acids, sulphonic acids, alkylamines, arylamines, ammonium salts, alkyl/dialkyl phosphates, phosphonic acids, and phosphonitrile compounds;
- (b) exposing the substrate surface to a silicon-containing precursor gas;
- and
- (c) exposing the substrate surface to a reaction accelerator;
- and
- repeating (b) and (c) at least once before repeating (a).
A method of forming a dielectric film, the method comprising:
- (a) exposing a substrate surface to a catalyst to form an adsorbed layer on the substrate surface;
- (b) exposing the substrate surface to a silicon-containing precursor gas;
- (c) exposing the substrate surface to a reaction accelerator, wherein said reaction accelerator is a chemical selected from the group consisting of halogens, halogen-containing alkanes, alkenes, hydrohalogen acids, ammonia, alcohol, water, organic acids, sulfuric acid, phosphate acid, and a combination thereof, wherein said reaction accelerator is a chlorine-containing chemical;
- and
- wherein exposure of the substrate to the reaction accelerator increases the film formation rate.
A method of forming a dielectric film, the method comprising:
- (a) exposing a substrate surface to a catalyst to form an adsorbed layer on the substrate surface;
- (b) exposing the substrate surface to a silicon-containing precursor gas;
- (c) exposing the substrate surface to a reaction accelerator, wherein said reaction accelerator is a halogen-containing or ammonia-containing chemical selected from the group consisting of halogens, halogen-containing alkanes, alkenes, hydrohalogen acids, ammonia, alcohol, water, organic acids, sulfuric acid, phosphate acid, and a combination thereof;
- and
- (d) repeating (b) and (c) at least once before repeating (a);
- wherein exposure of the substrate to the reaction accelerator increases the film formation rate.
Dependencies are inferred from the claim text.