Back to results
US 7,678,708 B2Granted
Systems and methods for forming metal oxide layers
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Timothy A. Quick
Life of this patent
Estimating the term…
Abstract
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Claims28
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- providing at least one source of ozone;
- and
- contacting the at least one precursor compound and the at least one source of ozone to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process;
- with the proviso that M is not silicon when the vapor deposition process is a chemical vapor deposition process.
8 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- providing at least one source of ozone;
- and
- contacting the precursor compounds and the at least one source of ozone to form a metal oxide layer on one or more surfaces of the substrate using a vapor deposition process;
- with the proviso that M is not silicon when the vapor deposition process is a chemical vapor deposition process.
8 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein
- M is a metal;
- R1, R2, and R3 are each independently hydrogen or a (C1-C8) alkyl moiety;
- y is 0 to 4;
- x is 1 to 8, wherein the values of x and y are dependent on the oxidation state of M;
- and
- R1 and R2 are each independently selected from the group consisting of methyl and ethyl moieties;
- providing at least one source of ozone;
- and
- contacting the precursor compounds and the at least one source of ozone to form a metal oxide layer on one or more surfaces of the substrate using a vapor deposition process;
- with the proviso that M is not silicon when the vapor deposition process is a chemical vapor deposition process.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate within a deposition chamber;
- providing a vapor comprising at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal;
- R1, R2, and R3 are each independently hydrogen, or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- providing a vapor comprising at least one source of ozone;
- and
- contacting the at least one precursor compound and the at least one source of ozone to form a metal oxide layer on one or more surfaces of the substrate within the deposition chamber using a vapor deposition process;
- with the proviso that M is not silicon when the vapor deposition process is a chemical vapor deposition process.
8 more elements
A method of manufacturing a memory device structure, the method comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal except silicon;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- providing at least one source of ozone;
- vaporizing the precursor compound to form a vaporized precursor compound;
- directing the vaporized precursor compound and the ozone to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
9 more elements
A method of manufacturing a memory device structure with an atomic layer deposition process, the method comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- providing at least one source of ozone;
- vaporizing the precursor compound to form a vaporized precursor compound;
- directing the vaporized precursor compound and the ozone to the substrate to form a silicon oxide layer on the first electrode of the substrate with the atomic layer deposition process;
- and
- forming a second electrode on the dielectric layer.
9 more elements
Dependencies are inferred from the claim text.