Method of making a contact in a semiconductor device
AssigneeInfineon Technologies AG
InventorsVeit Klee, Roman Knoefler, Uwe Paul Schroeder
Life of this patent
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Abstract
To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.
Claims26
A method for forming a semiconductor device, the method comprising:
- forming an insulating layer over a conductive region;
- forming a silicon layer over the insulating layer;
- forming a pattern transfer layer over the silicon layer;
- removing portions of the pattern transfer layer to expose portions of the silicon layer, wherein remaining portions of the pattern transfer layer overlie the portions of the insulating layer in which contact holes will be formed;
- altering the exposed portions of the silicon layer such that the exposed portions of the silicon layer are distinct from unexposed portions of the silicon layer;
- removing the remaining portions of the pattern transfer layer;
- using an HF etch to remove portions of the silicon layer that were underlying the pattern transfer layer and not altered during the altering step, wherein portions of the insulating layer are exposed after the unaltered portions of the silicon layer have been removed;
- and
- etching the exposed portions of the insulating layer to form said contact holes.
A method of forming a semiconductor device, the method comprising:
- forming a transistor in a semiconductor body;
- forming an insulating layer over the semiconductor body including over the transistor;
- depositing a silicon layer over the insulating layer;
- depositing a pattern transfer layer over the silicon layer;
- forming a resist layer over the pattern transfer layer;
- patterning the resist layer to expose portions of the pattern transfer layer;
- removing the exposed portions of the pattern transfer layer, wherein portions of the silicon layer are exposed after the exposed portions of the pattern transfer layer are removed;
- depositing a metal over the exposed portions of the silicon layer;
- reacting the metal with the exposed portions of the silicon layer to form a silicide masking layer;
- removing remaining portions of the pattern transfer layer;
- removing unreacted portions of the silicon layer using an HF etch;
- etching a contact hole in the insulating layer using the silicide masking layer as a mask;
- forming a conductor within the contact hole, the conductor being electrically coupled to the transistor;
- and
- removing the silicide masking layer.
Dependencies are inferred from the claim text.