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US 7,678,699 B2Granted
Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
AssigneeAdvanced Micro Devices, Inc.
InventorsJoerg Hohage, Matthias Lehr, Volker Kahlert
Life of this patent
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Abstract
A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.
Claims19
A method, comprising:
- forming a copper-based metal region in a dielectric layer of a metallization layer of a semiconductor device, said copper-based metal region having an exposed surface;
- cleaning said exposed surface using a thermal-chemical treatment in a gaseous ambient to form a cleaned surface, wherein performing said thermal-chemical treatment comprises supplying ammonia and nitrogen gases and heating said exposed surface;
- modifying the cleaned surface in a thermal treatment on the basis of a silicon-containing precursor;
- and
- depositing a capping layer on said modified surface, wherein no plasma is established at any point between a beginning of the cleaning of said exposed surface and an end of the modifying of the cleaned surface.
2 more elements
A method, comprising:
- providing a semiconductor device comprising a substrate having formed thereon a copper-based metal region having an exposed surface;
- cleaning said exposed surface by means of a thermal-chemical treatment in a gaseous ambient to form a cleaned surface, wherein performing said thermal-chemical treatment comprises supplying ammonia and nitrogen gases and heating said exposed surface;
- modifying a surface of the cleaned surface on the basis of a silicon-containing precursor, wherein no plasma is established at any point between a beginning of the cleaning of said exposed surface and an end of the modifying of said cleaned surface;
- and
- depositing in situ a capping layer in the presence of a deposition ambient;
- and
- establishing a plasma in the deposition ambient to initiate the depositing of the capping layer.
4 more elements
Dependencies are inferred from the claim text.