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US 7,678,688 B2Granted
Method for forming metal interconnection in image sensor
OwnerKyeong-Keun Choiinventor
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Abstract
A method for forming a metal interconnection in an image sensor includes forming a first interlayer dielectric (ILD) layer having a contact plug over a substrate, forming a diffusion barrier layer over the first ILD layer, performing a forming gas annealing, forming a second ILD layer over the diffusion barrier layer, etching the second ILD layer and the diffusion barrier layer to form a trench, forming a conductive layer to fill the trench, and planarizing the conductive layer to form a metal interconnection electrically connected to the contact plug.
Claims15
A method for forming a metal interconnection in an image sensor, the method comprising:
- forming a first interlayer dielectric (ILD) layer having substantially and lower surfaces and a contact plug that extends from the upper surface to the lower surface over a substrate;
- forming a diffusion barrier layer over the first ILD layer;
- performing a forming gas annealing after forming the diffusion barrier layer;
- forming a second ILD layer over the diffusion barrier layer;
- etching through the second ILD layer and the diffusion barrier layer to form a trench;
- filling the trench with a conductive material which is electrically connected to the contact plug;
- and
- planarizing the conductive layer and an upper surface of the conductive material.
5 more elements
Dependencies are inferred from the claim text.