Ultraviolet assisted pore sealing of porous low k dielectric films
AssigneeAxcelis Technologies, Inc.
InventorsCarlo Waldfried, Orlando Escorcia, Ivan Berry
Life of this patent
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Abstract
Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.
Claims20
A process for sealing a surface of an interlayer dielectric comprising a porous low k dielectric material disposed on a substrate, comprising:
- forming and patterning the interlayer dielectric comprising the porous low k dielectric material;
- and
- subsequently exposing the porous low k dielectric material to an ultraviolet radiation pattern for a period of time, intensity, and wavelength effective to seal the surface of the interlayer dielectric to a depth less than or equal to about 20 nanometers prior to depositing additional layers and/or prior to further processing, wherein the surface is substantially free of open pores and the porous low k dielectric material has a dielectric constant less than 4.
A process for forming an electrical interconnect structure, comprising:
- patterning an interlayer dielectric comprising a porous low k dielectric material disposed on a substrate;
- exposing the porous low k dielectric film subsequent to patterning to ultraviolet radiation for a period of time, intensity, and wavelength pattern effective to seal the surface of the interlayer dielectric to a depth less than or equal to about 20 nanometers prior to depositing additional layers and/or prior to further processing, wherein the surface is substantially free of open pores and the porous low k dielectric material has a dielectric constant less than 4;
- and
- depositing a barrier layer and/or a conductive layer onto the patterned interlayer dielectric, wherein the barrier layer is substantially free of pinholes.
A process for sealing an interlayer dielectric comprising a porous low k dielectric material disposed on a substrate, the process comprising:
- forming and patterning the interlayer dielectric comprising the porous low k dielectric material;
- and
- subsequently oxidizing a surface of the interlayer dielectric by exposing the porous low k dielectric material to an ultraviolet radiation pattern for a period of time, intensity, and wavelength effective in an atmosphere comprising oxygen to seal the surface of the interlayer dielectric to a depth less than or equal to about 20 nanometers prior to depositing additional layers and/or prior to further processing, wherein the porous low k dielectric material has a dielectric constant less than 4.
A process for sealing an interlayer dielectric comprising a porous low k dielectric material disposed on a substrate, the process comprising:
- forming and patterning the interlayer dielectric comprising the porous low k dielectric material;
- and
- subsequently carbonizing a surface of the interlayer dielectric by exposing the porous low k dielectric material to an ultraviolet radiation pattern for a period of time, intensity and wavelength effective to seal the surface of the interlayer dielectric to a depth less than or equal to about 20 nanometers prior to depositing additional layers and/or prior to further processing, wherein the porous low k dielectric material has a dielectric constant less than 4.
A process for sealing an interlayer dielectric comprising a porous low k dielectric material disposed on a substrate, the process comprising:
- forming and patterning the interlayer dielectric comprising the porous low k dielectric material;
- and
- subsequently densifying a surface of the interlayer dielectric by exposing the porous low k dielectric material to an ultraviolet radiation pattern for a period of time, intensity, and wavelength effective to seal the surface of the interlayer dielectric to a depth less than or equal to about 20 nanometers prior to depositing additional layers and/or prior to further processing, wherein the porous low k dielectric material has a dielectric constant less than 4.
Dependencies are inferred from the claim text.