Crystallization method of amorphous silicon for forming large grain with single pulse laser
AssigneeElectronics and Telecommunications Research Institute
InventorsKi Bong Song, Jun Ho Kim
Life of this patent
Estimating the term…
Abstract
A layer structure comprising substrate, a metal layer, a first amorphous silicon layer, an insulating layer, and a second amorphous silicon layer, and a method of crystallizing the second amorphous silicon layer by irradiating single pulse laser to the layer structure are provided. The method provides an effect of forming large grain of amorphous silicon as good as using dual pulse laser or higher just by using single pulse laser without additional optical system. A semiconductor device employing the layer structure maximizes an electron mobility.
Claims11
A method of crystallizing amorphous silicon comprising:
- forming a layer structure comprising a substrate, a metal layer, a first amorphous silicon layer, an insulating layer, and a second amorphous silicon layer;
- and
- irradiating laser light to the layer structure so as to crystallize the second amorphous silicon layer, wherein the first amorphous silicon layer is formed nearer the substrate than the second amorphous silicon layer, and
- wherein the first amorphous silicon layer acts as a heat seed for reducing a crystallization speed of the second amorphous silicon layer.
A method of crystallizing amorphous silicon comprising:
- forming a layer structure comprising a substrate, a metal layer, a first amorphous silicon layer, an insulating layer, and a second amorphous silicon layer;
- and
- irradiating laser light to the layer structure so as to crystallize the second amorphous silicon layer, wherein the laser is a single-pulse laser and is applied to only one surface of the layer structure.
Dependencies are inferred from the claim text.