Method of forming an insulating layer in a semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorSeung Hyun Kim
Life of this patent
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Abstract
Embodiments relate to semiconductor device and a method of forming an insulating layer with a low dielectric constant in a semiconductor device. The method may include forming a plurality of metal patterns on a semiconductor substrate, depositing a first insulating layer on the entire surface of the semiconductor substrate having the plurality of metal patterns, depositing an etch stop layer on the first insulating layer, depositing a second insulating layer on the etch stop layer, removing the second insulating layer until the etch stop layer formed above each of the plurality of metal patterns is exposed, etching the exposed etch stop layer, and depositing a third insulating layer on the entire surface of the semiconductor substrate.
Claims11
A method comprising:
- depositing a first insulating layer on a surface of a semiconductor substrate;
- depositing an etch stop layer on the first insulating layer;
- depositing a second insulating layer on the etch stop layer;
- removing a portion of the second insulating layer until a portion of the etch stop layer is exposed;
- removing at least the exposed etch stop layer;
- and
- depositing a third insulating layer over the first and second insulating layers to form an air layer between at least the first and third insulating layers,
- wherein the first insulating layer and the etch stop layer are substantially curved in shape, and wherein the etch stop layer is removed substantially at an apex of the curve.
A method comprising:
- depositing a first insulating layer on a surface of a semiconductor substrate;
- depositing an etch stop layer on the first insulating layer;
- depositing a second insulating layer on the etch stop layer;
- removing a portion of the second insulating layer until a portion of the etch stop layer is exposed;
- removing at least the exposed etch stop layer;
- and
- depositing a third insulating layer over the first and second insulating layers to form an air layer between at least the first and third insulating layers,
- wherein the first insulating layer and the etch stop layer are substantially triangular in shape, and wherein the etch stop layer is removed substantially at an apex of the curve.
Dependencies are inferred from the claim text.