Method of fabricating a recess gate type transistor
AssigneeHynix Semiconductor Inc.
InventorsKyoung Bong Rouh, Seung Woo Jin, Min Yong Lee, Yong Soo Jung
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Abstract
A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
Claims7
A method for fabricating a semiconductor device having recess gates comprising:
- forming inverse, asymmetric triangular recesses having a first sidewall and a second sidewall by selectively etching the surface of a semiconductor substrate at a tilt, wherein the first sidewall is perpendicular to a surface of the semiconductor substrate and the second sidewall is sloped with respect to the surface of the semiconductor substrate and the triangular recesses define first and second regions;
- implanting ions into the inverse triangular recesses;
- forming a gate insulating film having a designated thickness on exposed side of the inverse triangular recess trench;
- forming a gate conductive film and a gate metal film sequentially on the gate insulating film so that the gate conductive film and the gate metal film fill the inverse triangular recess and protrude from the surface of the semiconductor substrate;
- and
- forming first and second junctions at the first and second regions, wherein the first and second junctions opposed to each other so that a channel is located along the first sidewall and the second sidewall.
Dependencies are inferred from the claim text.