MOSFET-type semiconductor device, and method of manufacturing the same

A method of manufacturing a MOSFET-type semiconductor device, the method comprising:

• forming first and second monocrystalline semiconductor layers in a shape of a wall on an insulating film, with the semiconductor layers being aligned to be parallel with each other;
• forming a gate electrode to be straddling over each of the first and second monocrystalline semiconductor layers via an insulating film;
• forming source and drain regions on each of the first and second monocrystalline semiconductor layers using the gate electrode as a mask;
• implanting carbon (C) at an oblique angle to the both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer;
• thermally oxidizing the side wall surfaces of each of the first and second monocrystalline semiconductor layers and then immersing them into an HF solution, to form a protective insulating film on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied;
• forming a first metal-semiconductor compound layer on both side walls of each of the source and drain regions of the first monocrystalline semiconductor layer to which C is not applied while maintaining the protective insulating film on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied;
• and
• forming a second metal-semiconductor compound layer having a different composition and Schottky barrier height with respect to the second semiconductor layer from those of the first metal-semiconductor compound layer on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied after removing the protective insulating film.

A method of manufacturing a MOSFET-type semiconductor device, the method comprising:

• forming first monocrystalline semiconductor layers in a shape of a wall on an insulating film, the first monocrystalline semiconductor layers being aligned in parallel with each other at intervals of a first distance;
• forming second monocrystalline semiconductor layers in a shape of a wall on the insulating film, the second monocrystalline semiconductor layers being aligned in parallel with each other at intervals of a second distance which is longer than the first distance, and in parallel with the first monocrystalline semiconductor layers;
• forming gate electrodes to be straddling over on each of side wall surfaces of each of the first and second monocrystalline semiconductor layers via an insulator film;
• forming source and drain regions on each of the first and second monocrystalline semiconductor layers using the gate electrodes as masks;
• implanting carbon (C), to both side walls of each of the source and drain regions of each of the second monocrystalline semiconductor layers by applying C thereto at an oblique angle;
• thermally oxidizing the side walls of each of the source and drain regions of each of the first and second monocrystalline semiconductor layers and then immersing them into an HF solution, to form a protective insulating film on both side walls of each of the source and drain regions of each of the second monocrystalline semiconductor layers to which C is applied;
• forming first metal-semiconductor compound layers on both side walls of each of the source and drain regions of each of the first monocrystalline semiconductor layers to which C is not applied while maintaining the protective insulating film on both side walls of each of the source and drain regions of each of the second monocrystalline semiconductor layer to which C is applied;
• and
• forming second metal-semiconductor compound layers having a different composition and Schottky barrier height with respect to the second semiconductor layers from those of the first metal-semiconductor compound layers on both side walls of each of the source and drain regions of each of the second monocrystalline semiconductor layers to which C is applied after removing the protective insulating film.

A method of manufacturing a MOSFET-type semiconductor device, the method comprising:

• forming first monocrystalline semiconductor layer in a shape of a thin wall on an insulating film;
• forming a second monocrystalline semiconductor layer in a shape of a thin wall on an insulating film with its longitudinal direction being oriented along a direction different from that of the first monocrystalline semiconductor layer;
• forming gate electrodes to be straddling over the first and second monocrystalline semiconductor layers via an insulating film;
• forming source and drain regions on each of the first and second monocrystalline semiconductor layers using the gate electrodes as masks;
• applying carbon (C) in a direction parallel to the side wall surfaces of the first monocrystalline semiconductor layer, to implant C to both side walls of each source and drain regions of the second monocrystalline semiconductor layer without implanting it to both side walls of each source and drain regions of the first monocrystalline semiconductor layer;
• thermally oxidizing the side wall surfaces of each of the source and drain regions of each of the first and second monocrystalline semiconductor layers and then immersing them into an HF solution, to form a protective insulating film on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied;
• forming a first metal-semiconductor compound layer on both side walls of each of the source and drain regions of the first monocrystalline semiconductor layer to which C is not applied while maintaining the protective insulating film on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied;
• and
• forming a second metal-semiconductor compound layer having a different composition and Schottky barrier height with respect to the second semiconductor layer from those of the first metal-semiconductor compound layer on both side walls of each of the source and drain regions of the second monocrystalline semiconductor layer to which C is applied after removing the protective insulating film.