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US 7,678,651 B2Granted
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorKi-Won Nam
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: providing a substrate structure in which a plurality of gate lines are already formed; forming a capping layer over the substrate structure; oxidizing the capping layer; and forming an insulation layer over the oxidized capping layer. The capping layer may include a nitride-based material. The insulation layer may include substantially the same material as the capping layer. The oxidizing of the capping layer may comprise performing a radical oxidation process.
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a substrate structure in which a plurality of gate lines are already formed;
- forming a capping layer over the entire substrate structure;
- oxidizing the capping layer;
- and
- forming an insulation layer over the entire oxidized capping layer,
- wherein the capping layer includes a nitride-based material, the gate lines include at least tungsten silicide, and the oxidizing of the capping layer comprises a radical oxidation process.
3 more elements
Dependencies are inferred from the claim text.