Method for manufacturing phase change memory device using a patterning process
AssigneeHynix Semiconductor Inc.
InventorHeon Yong Chang
Life of this patent
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Abstract
A phase change memory device is made by processes including forming a first interlayer dielectric on a semiconductor substrate that has junction regions. Then etching the first interlayer dielectric and thereby defining contact holes that expose the junction regions. A conductive layer is formed on the first interlayer dielectric to fill the contact holes. Forming a hard mask layer on the conductive layer and etching the hard mask layer and the conductive layer to form contact plugs in the contact holes. Finally, forming a conductive layer pattern that is located on the contact plug and portions of the first interlayer dielectric adjacent to the contact plug and having a hard mask thereon.
Claims11
A method for manufacturing a phase change RAM, comprising the steps of:
- forming a first interlayer dielectric on a semiconductor substrate which has junction regions;
- etching the first interlayer dielectric and thereby defining contact holes which expose the junction regions;
- forming a conductive layer on the first interlayer dielectric to fill the contact holes;
- forming a hard mask layer on the conductive layer;
- and
- etching the hard mask layer and the conductive layer together, and thereby forming contact plugs in the contact holes and forming a conductive layer pattern which is located on the contact plug and portions of the first interlayer dielectric adjacent to the contact plug and has a hard mask thereon;
- wherein the contact plug and the conductive layer pattern are formed through a single etching process, so that the contact plug and the conductive layer pattern are integrally formed with each other.
Dependencies are inferred from the claim text.