Inductor formed in an integrated circuit

A method for forming an inductor in a semiconductor integrated circuit, the method comprising:

• forming a first inductor line on a metallization dielectric layer, the first inductor line having terminal end pads;
• forming a dielectric layer over the first inductor line and the terminal end pads;
• forming a first opening in the dielectric layer to expose the first inductor line, wherein the length of the opening is substantially co-extensive with the first inductor line;
• filling the first opening with a conductive material to form a second inductor line that is in electrical communication and substantially co-extensive with the first inductor line and wherein the first and second inductor lines are cooperable to cause an inductive effect;
• forming second openings in the dielectric layer to expose the terminal end pads subsequent to forming the second inductor line;
• and
• filling the second openings with a conductive material to form contacts for the first and second inductor lines.