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US 7,678,630 B2Granted
Strained semiconductor device and method of making same
AssigneeInfineon Technologies AG
InventorRichard Lindsay
Life of this patent
Estimating the term…
Abstract
A method of making a semiconductor device is disclosed. An upper surface of a semiconductor body is amorphized and a liner is formed over the amorphized upper surface. The upper surface can then be annealed. A transistor is formed at the upper surface.
Claims29
A method of making a semiconductor device, the method comprising:
- providing a semiconductor body;
- etching an isolation trench in the semiconductor body;
- after etching the isolation trench, amorphizing an upper surface of the semiconductor body;
- forming a liner over the amorphized upper surface;
- annealing the upper surface;
- filling the isolation trench after annealing the upper surface;
- and
- forming a transistor at the upper surface.
5 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor body;
- etching an isolation trench in the semiconductor body;
- after etching the isolation trench, amorphizing an upper surface of the semiconductor body;
- forming a liner over the amorphized upper surface;
- annealing the upper surface;
- forming a transistor at the upper surface;
- and
- removing the liner after annealing the upper surface but prior to forming the transistor.
5 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor body;
- forming an isolation trench in the semiconductor body;
- after forming the isolation trench, amorphizing an upper surface of the semiconductor body adjacent the isolation trench;
- depositing a stress-inducing liner over the upper surface of the semiconductor body;
- annealing the upper surface of the semiconductor body such that the upper surface is in a substantially crystalline state;
- removing the stress-inducing liner;
- filling the isolation trench with an insulating material after removing the stress-inducing liner;
- and
- forming an electronic device at the upper surface of the semiconductor body adjacent the isolation trench.
6 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor fin overlying a portion of a substrate;
- amorphizing at least an upper portion of the semiconductor fin;
- forming a stress-inducing liner over the semiconductor fin;
- annealing the semiconductor fin;
- and
- removing the stress-inducing liner.
3 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor fin overlying a portion of a substrate;
- amorphizing at least an upper portion of the semiconductor fin;
- depositing a stress-inducing liner over the semiconductor fin;
- annealing the semiconductor fin such that the semiconductor fin is at least a substantial part of the fin is in a crystalline state;
- removing the stress-inducing liner;
- and
- forming a gate electrode over a portion of the semiconductor fin.
4 more elements
Dependencies are inferred from the claim text.