Semiconductor device and method for manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takeshi Fukunaga
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Abstract
Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.
Claims12
A method for manufacturing a semiconductor device, comprising:
- forming a semiconductor film comprising silicon having a first region and a second region on an insulating film;
- adding germanium to said first region of said semiconductor film wherein said first region of said semiconductor film includes a Si1-XGex film where 0<X<1 by adding germanium;
- adding a crystallization promoting material to said first and second regions of said semiconductor film;
- heating said first and second regions of said semiconductor film;
- and
- patterning said first and second regions of said semiconductor film after said heating step,
- wherein said first region of said semiconductor film includes a polycrystalline Si1-XGeX film where 0<X<1 by said heating step and said second region of said semiconductor film includes an amorphous semiconductor film after said heating step.
A method for forming a semiconductor device,
- forming an amorphous semiconductor film comprising silicon having a first region and a second region on an insulating film;
- adding germanium to said first region of said amorphous semiconductor film wherein said first region of said amorphous semiconductor film includes an amorphous Si1-XGeX film where 0<X<1 by adding germanium;
- adding a crystallization promoting material to said amorphous semiconductor film;
- and
- heating said amorphous semiconductor film,
- wherein said first region of said amorphous semiconductor film includes a polycrystalline Si1-XGeX film where 0<X<1 by said heating step and said second region of said amorphous semiconductor film remains as said amorphous semiconductor film after said heating step;
- further comprising a step of forming a first active layer and a second active layer by patterning said first region of said polycrystalline Si1-XGeX film where 0<X<1 and said second region of said amorphous semiconductor film;
- and
- wherein said first active layer is used in a driver circuit and said second active layer is used in a pixel portion.
A method for forming a semiconductor device,
- forming an amorphous semiconductor film comprising silicon having a first region and a second region on an insulating film;
- adding germanium to said first region of said amorphous semiconductor film wherein said first region of said amorphous semiconductor film includes an amorphous Si1-XGeX film where 0<X <1 by adding germanium;
- adding a crystallization promoting material to said amorphous semiconductor film;
- and
- heating said amorphous semiconductor film,
- wherein said first region of said amorphous semiconductor film includes a polycrystalline Si1-XGeX film where 0<X<1 by said heating step and said second region of said amorphous semiconductor film remains as said amorphous semiconductor film after said heating step.
Dependencies are inferred from the claim text.