Semiconductor method and device with mixed orientation substrate

A method of forming a semiconductor device, the method comprising:

• providing a wafer that includes a semiconductor substrate of a first crystal orientation, an insulating layer over the semiconductor substrate, and a semiconductor layer of a second crystal orientation over the insulating layer;
• removing a portion of the semiconductor layer to expose a portion of the insulating layer;
• forming insulating material over the wafer;
• removing first portions of the insulating material to expose portions of the semiconductor layer;
• removing second portions of the insulating material and portions of the insulating layer to expose portions of the semiconductor substrate;
• and
• after removing the first and the second portions of the insulating material, epitaxially growing semiconductor material of the first crystal orientation over the exposed portions of the semiconductor substrate and semiconductor material of the second crystal orientation over exposed portions of the semiconductor layer.

A method of forming a semiconductor device, the method comprising:

• providing a wafer that includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation;
• forming insulating material over the wafer;
• removing a first portion of the insulating material to expose the first semiconductor region and a second portion of the insulating material to expose the second semiconductor region;
• and
• after removing the first portion and the second portion, epitaxially growing semiconductor material of the first crystal orientation over the exposed first semiconductor region and semiconductor material of the second crystal orientation over the exposed second semiconductor region.

A method of making a semiconductor device, the method comprising:

• providing a wafer that includes a semiconductor body with semiconductor material of a first crystal orientation, an insulating layer over the semiconductor body, and a semiconductor layer with semiconductor material of a second crystal orientation over the insulating layer;
• removing portions of the semiconductor layer and the insulating layer to expose portions of the semiconductor body;
• epitaxially growing semiconductor material of the first crystal orientation over the exposed portions of the semiconductor body and epitaxially growing semiconductor material of the second crystal orientation over portions of the semiconductor layer;
• forming a first transistor of a first conductivity type in the semiconductor material of the first crystal orientation;
• forming a second transistor of a second conductivity type in the semiconductor material of the second crystal orientation;
• and
• forming an isolation region between the first transistor and the second transistor, wherein a portion of the isolation region overlies a portion of the semiconductor layer.