Crystallization pattern and method for crystallizing amorphous silicon using the same

A method for crystallizing amorphous silicon in order to fabricate a polycrystalline silicon thin film transistor, the method comprising the steps of:

• forming an amorphous silicon film on a glass substrate;
• forming a crystallization pattern comprised of at least one of a hole and a dimple in the amorphous silicon film by patterning the amorphous silicon film in a form of an active pattern of the thin film transistor;
• and
• crystallizing the crystallization pattern into polycrystalline silicon with lateral growth simultaneously from both a peripheral region and at least one crystallization inducement pattern by irradiating a laser onto the crystallization pattern, wherein
• the crystallization pattern includes the peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance, the internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.