Semiconductor device with gel-type thermal interface material
AssigneeAdvanced Micro Devices, Inc.
InventorsMaxat Touzelbaev, Raj Master, Frank Kuechenmeister
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Abstract
Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
Claims27
A method of manufacturing, comprising:
- forming a metal layer on a semiconductor chip;
- applying a gel-type thermal interface material layer on the metal layer;
- and
- applying solvent and a catalyst material to the metal layer prior to applying the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
A method of manufacturing, comprising:
- forming a metal layer on a semiconductor chip, the metal layer including a catalyst;
- applying a gel-type thermal interface material layer on the metal layer;
- and
- curing the gel-type thermal interface material layer, the catalyst facilitating bonding between the gel-type thermal interface material layer and the metal layer.
An apparatus, comprising:
- a semiconductor chip having a metal layer;
- a gel-type thermal interface material layer on the metal layer;
- and
- whereby the metal layer includes a catalyst to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
Dependencies are inferred from the claim text.