Methods for forming resistive switching memory elements

A method for fabricating a resistive switching memory element on a conducting element that is electrically isolated by laterally adjacent insulating regions, the method comprising:

• selectively electrolessly depositing a conductive material above the conducting element without depositing the conductive material on the insulating regions;
• oxidizing the conductive material to form a resistive switching metal oxide;
• depositing an upper electrode above the resistive switching metal oxide;
• and
• forming a lower electrode on the conducting element by depositing a lower electrode conductor that contains nickel on the conducting element, wherein the lower electrode conductor oxidizes less readily than the conductive material.

A method for forming a resistive switching memory element, comprising:

• depositing a first conductive material above a conducting element using a first deposition technique, the first conductive material serves as at least part of a lower electrode for the resistive switching memory element;
• depositing a second conductive material on the first conductive material using a second deposition technique different from the first deposition technique, wherein the second conductive material oxidizes more readily than the first conductive material, and wherein the first and second conductive material comprise substantially a same material;
• and
• oxidizing the second conductive material to form the resistive switching metal oxide.