Process for the fabrication of an inertial sensor with failure threshold
AssigneesSTMicroelectronics S.r.l., Nokia Corporation
InventorsSarah Zerbini, Angelo Merassi, Guido Spinola Durante, Biagio De Masi
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Abstract
A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
Claims33
A process for the fabrication of an inertial sensor with failure threshold, comprising the steps of:
- forming, on top of a substrate of a semiconductor wafer, at least one sample element embedded in a sacrificial region;
- forming, on top of said sacrificial region, a body connected to said sample element;
- and
- etching said sacrificial region, so as to free said body and said sample element, said sample element being physically breakable, following etching of said sacrificial region, when subjected to a preselected strain.
A method for manufacturing an inertial sensor, comprising:
- forming, on a semiconductor substrate, a sample element having a first end coupled to the substrate, and
- forming the sample element being configured to physically break under a preselected strain;
- and
- forming, above the semiconductor substrate, a semiconductor material body coupled to a second end of the sample element.
A process for the fabrication of an inertial sensor with failure threshold, comprising:
- forming, on top of a substrate of a semiconductor wafer, a conductive sample element coupled at a first end thereof to the substrate and shaped so as to be subject to a stress when a second end thereof is outside a relative resting position with respect to the substrate, and wherein configuring the conductive sample element is configured so as to undergo a physical failure in a controlled way when subjected to a stress of pre-selected intensity;
- and forming a body connected to the second end of the sample element.
Dependencies are inferred from the claim text.