Method for manufacturing surface-emitting semiconductor laser

A method for manufacturing a surface-emitting semiconductor laser in which first and second Distribution Bragg Reflectors with an active layer in between are disposed to form a vertical direction resonator, comprising the steps of:

• forming at least a first Distribution Bragg Reflector on a substrate;
• forming a first clad layer on the first Distribution Bragg Reflector;
• forming the active layer on the first clad layer;
• forming a second clad layer on the active layer;
• forming a second Distribution Bragg Reflector on the second clad layer;
• forming a cavity by etching from a top surface of the semiconductor laser to at least vertical depth of the second Distribution Bragg Reflector or forming a low refractive-index region made by filling material of low refractive-index up in a cavity formed by etching from a top surface of the semiconductor laser to at least the vertical depth of said second Distribution Bragg Reflector, wherein the cavity or the low refractive-index region has at least one opposing end that opposes to a central vertical axis and which does not extend fully to the central vertical axis;
• forming a center hole along the central vertical axis of said resonator to a vertical depth greater than the vertical depth of the cavity or low refractive-index region;
• and
• oxidizing selectively from the outside surface of an outer circumferential portion of said resonator which surrounds the central vertical axis and from said center hole in the lower part of said first clad layer or in the upper part of said second clad layer.