Integrated optical device and fabrication method thereof
AssigneeSumitomo Electric Industries, Ltd.
InventorTomokazu Katsuyama
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AssigneeSumitomo Electric Industries, Ltd.
InventorTomokazu Katsuyama
Estimating the term…
An integrated optical device comprising a first semiconductor optical element provided on a first region of the main face of a substrate and a second semiconductor optical element provided on a second region and optically coupled to the first semiconductor optical element is fabricated. A first III-V compound semiconductor layer containing Al element is formed on the main face. A second III-V compound semiconductor layer for forming the first semiconductor optical element is then formed on the first III-V compound semiconductor layer. An etching mask M is formed on the first region. The end point of the dry etching is detected by using the etching mask M to dry-etch the second III-V compound semiconductor layer while detecting Al element. The first semiconductor optical element is thus formed. The second semiconductor optical element is formed on the second region.
A fabrication method for an integrated optical device having a first semiconductor optical element that is provided on a first region of a main face of a substrate and a second semiconductor optical element that is provided on a second region of the main face of the substrate and that is optically coupled to the first semiconductor optical element, comprising the steps of:
Dependencies are inferred from the claim text.