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US 7,678,591 B2Granted
Semicoductor chip and method for production thereof
AssigneeOSRAM GmbH
InventorStefan Illek
Life of this patent
Estimating the term…
Abstract
For producing semiconductor chips by thin-film technology, an active layer (2) that has been grown on a substrate, with contact layers on the back side that have a base layer (3), is reinforced by a reinforcement layer (4). Next, an auxiliary carrier layer (5) is applied, which makes the further processing of the active layer (2) possible. The reinforcement layer (4) and the auxiliary carrier layer (5) replace the mechanical carriers used in conventional methods.
Claims28
A method for producing semiconductor chips, comprising the steps of:
- forming an active layer with a photon-emitting zone on a substrate;
- forming an electrical contact layer structured into distinct regions, each region representing an electric contact point for feeding a current into the active layer, on a first side of the active layer, the electrical contact layer being a multi-layered stack including a base layer and a metallic reinforcing layer and having a thickness at least equal to the active layer, the metallic reinforcing layer providing the semiconductor chip with mechanical strength to permit subsequent processing of the semiconductor chip without a carrier body;
- applying an auxiliary carrier layer to the distinct regions of the electrical contact layer so that the auxiliary carrier layer overlaps a main surface of the metallic reinforcing layer remote from the active layer and laterally overlaps side faces of the metallic reinforcing layer;
- and
- removing the substrate.
2 more elements
A method for producing semiconductor chips comprising the steps of:
- forming an active layer with a photon-emitting zone on a substrate;
- forming a contact point on a first side of the active layer, the contact point being a multi-layered stack including a base layer and a metallic reinforcing layer, said multi-layered stack having a thickness at least equal to the active layer, the metallic reinforcing layer providing the semiconductor chip with mechanical strength to permit subsequent processing of the semiconductor chip without a carrier body;
- applying an auxiliary carrier layer to the metallic reinforcing layer and the active layer so that the auxiliary carrier layer overlaps a main surface of the metallic reinforcing layer remote from the active layer, laterally overlaps with side faces of the reinforcing layer, and overlaps regions of a main surface of the active layer uncovered by the multi-layered stack;
- removing the substrate;
- forming a further contact point on a second side, opposite to the first side, of the active layer;
- and
- separating the active layer into multiple semiconductor chips;
- wherein the active layer is separated into multiple semiconductor chips after applying said auxiliary carrier layer to said metallic reinforcing layer.
5 more elements
A method for producing semiconductor chips, comprising the steps in the following order of:
- a) forming an active layer with a photon-emitting zone on a substrate;
- b) forming an electrical contact layer structured into distinct regions, each region representing an electric contact point for feeding a current into the active layer, on one side of the active layer, the electrical contact layer being a multi-layered stack including a base layer and a metallic reinforcing layer and having a thickness at least equal to the active layer, the metallic reinforcing layer providing the semiconductor chip with adequate mechanical strength to permit subsequent processing of the semiconductor chip without a carrier body;
- c) applying an auxiliary carrier layer to the active layer and the distinct regions of the electrical contact layer so that the auxiliary carrier layer overlaps a main surface of the metallic reinforcing layer remote from the active layer, laterally overlaps side faces of the metallic reinforcing layer, and overlaps regions of a main surface of the active layer uncovered by the electrical contact layer;
- d) removing the substrate;
- e) partitioning the active layer into multiple semiconductor chips;
- and
- f) removing the auxiliary layer.
4 more elements
A method for producing semiconductor chips, comprising the steps of:
- forming an active layer with a photon-emitting zone on a substrate;
- forming a contact point on a first side of the active layer, the contact point being a multi-layered stack including a base layer and a reinforcing layer, said multi-layered stack having a thickness at least equal to the active layer, the reinforcing layer comprising gold and providing the semiconductor chip with mechanical strength to permit subsequent processing of the semiconductor chip without a carrier body;
- applying an auxiliary carrier layer to the reinforcing layer and the active layer so that the auxiliary carrier layer overlaps a main surface of the reinforcing layer remote from the active layer, laterally overlaps with side faces of the reinforcing layer, and overlaps regions of a main surface of the active layer uncovered by the electrical contact layer;
- removing the substrate;
- forming a further contact point on a second side, opposite to the first side, of the active layer;
- and
- separating the active layer into multiple semiconductor chips;
- wherein the active layer is separated into multiple semiconductor chips after applying said auxiliary carrier layer to said reinforcing layer.
5 more elements
Dependencies are inferred from the claim text.