Method for constructing module for optical critical dimension (OCD) and measuring method of module for optical critical dimension using the module
AssigneeUnited Microelectronics Corp.
InventorsChun-Chi Huang, Wen-Yi Teng
Life of this patent
Estimating the term…
Abstract
An optical critical dimension measuring method, applicable in measuring a pattern, that includes a plurality of polysilicon layers, of a device, is provided. The method includes obtaining a real curve corresponding to the to-be-measured device. Then, determining whether an ion implantation process has been performed on the polysilicon layers, a different module is selected. A correlation process is performed according to the selected module to generate a theoretical curve that correlates with the real curve to obtain a plurality of parameters corresponding to the theoretical curve.
Claims37
A method for measuring optical critical dimension, adapted for measuring a to-be-measured pattern of a to-be-measured device, wherein the to-be-measured pattern comprises a polysilicon layer thereunder, the method comprising:
- obtaining a real curve corresponding to the to-be-measured device;
- selecting a different module in accordance to whether the polysilicon layer has been subjected to an ion implantation process;
- when the polysilicon layer has not been subjected to the ion implantation process, a first module is selected, and the first module is established with a first stacked layer, and the first stacked layer includes a polysilicon material layer but does include an amorphous silicon material layer, and
- when the polysilicon layer has been subjected to the ion implantation process, and a surface of the polysilicon layer is amorphorized into an amorphous silicon layer, then the module being selected is in accordance to whether a thermal process has been performed to sufficiently crystallize the amorphous silicon layer,
- when the polysilicon layer has not been subjected to the thermal process or the amorphous silicon layer has not crystallized completely into the polysilicon layer, a second module is selected, wherein the second module is established with a second stacked layer, and the stacked layer includes a polysilicon material layer and an amorphous silicon material layer above the polysilicon material layer, and
- when the polysilicon layer has been subjected to the thermal process to completely crystallize the amorphous silicon layer into the polysilicon layer, a third module is selected, wherein the third module is constructed with a third stacked layer, wherein the third stacked layer includes a polysilicon material layer, but does not include an amorphous silicon material layer;
- and
- performing a correlation process based on the selected module to generate a theoretical curve that correlates with the real curve to obtain a plurality of parameters corresponding to the theoretical curve.
A method of establishing n optical critical dimension module, wherein the optical critical dimension module is applicable in measuring a to-be-measured pattern of a to-be-measured device, the to-be-measured pattern comprises a pre-layer, the method comprising:
- establishing a plurality of modules according to the to-be-measured pattern, a type of each layer underneath the to-be-measured pattern and a process being performed on the each layer, and the modules comprising:
- a first module, applicable when the pre-layer of the to-be-measured device has not been subjected to a treatment process, the first module is constructed with a first stacked layer, and the first stacked layer includes, from a bottom to a top, a first pre-material layer and a first to-be-measured material layer, but does not include a treatment layer;
- and
- a second module, applicable when the pre-layer of the to-be-measured device has been subjected to the treatment process to form a treatment layer, the second module is constructed with a second stacked layer, and the second stacked layer includes a second pre-material layer, a treatment material layer and a second to-be-measured material layer.
An optical critical dimension measuring method, applicable in measuring a first to-be-measured pattern and a second to-be-measured pattern, wherein the first to-be-measured pattern comprises an undoped polysilicon layer underneath, and the second to-be-measured pattern comprises a doped polysilicon layer underneath, and a part of the doped polysilicon layer is amorphorized into a doped amorphous silicon layer, the method comprising:
- obtaining a first real curve that corresponds to the first to-be-measured pattern and a second real curve that corresponds to the second to-be-measured pattern;
- and
- selecting a first module and a second module, which is different from the first module, and performing a correlation process correspondingly with the first real curve and the second real curve to generate a first theoretical curve that correlates with the first real curve and a second theoretical curve that correlates with the second real curve to obtain a plurality of first parameters corresponding to the first theoretical curve and a plurality of parameters corresponding to the second theoretical curve.
A method for measuring optical critical dimension, adapted for measuring a to-be-measured pattern of a to-be-measured device, wherein the to-be-measured pattern comprises a polysilicon layer thereunder, the method comprising:
- obtaining a real curve corresponding to the to-be-measured device;
- selecting a different module in accordance to whether the polysilicon layer has been subjected to an ion implantation process;
- and
- performing a correlation process based on the selected module to generate a theoretical curve that correlates with the real curve to obtain a plurality of parameters corresponding to the theoretical curve.
Dependencies are inferred from the claim text.