Intermediate semiconductor device structures using photopatternable, dielectric materials
AssigneeMicron Technology, Inc.
InventorsWeimin Li, Gurtej S. Sandhu
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Abstract
A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable is disclosed. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.
Claims45
An intermediate semiconductor device structure, comprising:
- a photopatternable material formed over a semiconductor substrate, wherein the photopatternable material comprises an organosilicon photoresist material formulated to be selectively converted to a silicon dioxide-based material by exposure to radiation;
- a cap material formed over the photopatternable material;
- and
- a photoresist formed over the cap material.
An intermediate semiconductor device structure, comprising:
- a photopatternable material formed over a semiconductor substrate, wherein the photopatternable material comprises an organosilicon photoresist material that is formulated to be selectively converted to a silicon dioxide-based material by exposure to radiation;
- a cap material formed over at least a portion of the photopatternable material;
- and
- a photoresist formed over at least a portion of the cap material.
An intermediate semiconductor device structure, comprising:
- a photopatternable material comprising an organosilicon photoresist material formed over a semiconductor substrate, at least a portion of the photopatternable material converted to a silicon dioxide-based material;
- a cap material formed over at least another portion of the photopatternable layer material;
- and
- a photoresist formed over at least a portion of the cap material.
Dependencies are inferred from the claim text.