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AssigneeMitsubishi Plastics, Inc.
InventorsTooru Hachisuka, Shigenobu Yoshida, Chiharu Okawara, Yoshinori Kobayashi, Kenji Ito, Hisashi Togashi, Kouichi Hirata
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The gas barrier film of the present invention is a gas barrier film comprising a base material, and an inorganic thin film composed of a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×1016 to 1×1019 spins/cm3, or a gas barrier film comprising a base material, an inorganic thin film containing silicon oxide and the other metal component formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide in the inorganic thin film observed by an ESR method is from 13×1014 to 3×1017 spins/mol, and a laminate wherein at least one paper and/or plastic film is laminated on the gas barrier film.
A gas barrier film comprising a base material, and an inorganic thin film comprising a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×1016 to 1×1019 spins/cm3,
A gas barrier film comprising a base material, and
A gas barrier film comprising a base material, and an inorganic thin film comprising silicon oxide formed on one or both surfaces of the base material, wherein a ratio of radical density (S2) of the Pb center measured after heating the gas barrier film at 120° C. for 24 hours to radical density (S1) of the Pb center of the inorganic thin film observed by an ESR method, (S2/S1), is 0.5 or more, and wherein the thickness of the inorganic thin film is from 0.1 to 500 nm.
Dependencies are inferred from the claim text.