Method for increasing deposition rates of metal layers from metal-carbonyl precursors
AssigneesTokyo Electron Limited, International Business Machines Corporation
InventorsKenji Suzuki, Emmanuel P. Guidotti, Gerrit J. Leusink, Fenton R. McFeely, Sandra G. Malhotra
Life of this patent
Estimating the term…
Abstract
A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
Claims24
A method of depositing a Ru metal layer on a substrate, the method comprising:
- providing a substrate in a process chamber of a deposition system;
- forming a process gas containing ruthenium-carbonyl precursor vapor and a CO gas by:
- heating a solid ruthenium-carbonyl precursor in a precursor evaporation system to a temperature and maintaining the ruthenium-carbonyl precursor at the temperature to form the ruthenium-carbonyl precursor vapor, and
- flowing the CO gas in contact with the solid ruthenium-carbonyl precursor in the precursor evaporation system during the heating to capture the ruthenium-carbonyl precursor vapor in the CO gas as the vapor is being formed;
- transporting the process gas from the precursor evaporation system to the process chamber;
- and
- exposing the substrate to the process gas to deposit a Ru metal layer on the substrate by a thermal chemical vapor deposition process.
A method of precursor delivery from a precursor evaporation system to a process chamber, comprising:
- heating a solid ruthenium-carbonyl precursor in the precursor evaporation system to a temperature to form ruthenium-carbonyl precursor vapor;
- flowing CO gas in contact with the solid ruthenium-carbonyl precursor in the precursor evaporation system during the heating to capture the ruthenium-carbonyl precursor vapor in the CO gas as the vapor is being formed;
- and
- transporting the ruthenium-carbonyl precursor vapor and the CO gas from the precursor evaporation system to the process chamber.
A method of precursor delivery from a precursor evaporation system to a process chamber, comprising:
- heating a solid metal-carbonyl precursor in the precursor evaporation system to a temperature to form vapor of the metal-carbonyl precursor;
- flowing a CO gas in contact with the solid metal-carbonyl precursor in the precursor evaporation system during the heating to capture the metal-carbonyl precursor vapor in the CO gas as the vapor is being formed;
- and
- transporting the metal-carbonyl precursor vapor and the CO gas from the precursor evaporation system to the process chamber.
Dependencies are inferred from the claim text.