Deposition of layers on substrates
AssigneeCambridge Enterprise Limited
InventorsFinlay Doogan Morrison, James Floyd Scott
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AssigneeCambridge Enterprise Limited
InventorsFinlay Doogan Morrison, James Floyd Scott
Estimating the term…
A process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n is provided comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having a fill fraction of at least 60%. Fill fractions of close to l00% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.
A process of depositing material having a voltage-dependent index of refraction n in the pores of a porous silicon, silica or alumina substrate, comprising providing a precursor solution containing precursors for the material to be deposited, forming the precursor solution into fine droplets and contacting the fine droplets with the porous substrate to effect deposition of the precursor solution in the pores, wherein the droplets have diameters of not more than 2 μm and wherein the pores are either in a two-dimensional array and have diameters of from 0.05 to 5 μm or are in a three-dimensional array and have a minimum diameter of from 0.05 to 5 μm.
Dependencies are inferred from the claim text.