Tantalum carbide nitride materials by vapor deposition processes

Abstract

Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.

Dependencies are inferred from the claim text.