Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
AssigneeMallinckrodt Baker, Inc.
InventorDavid C. Skee
Life of this patent
Estimating the term…
Abstract
The invention provides alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions contain (a) one or more bases and (b) one or more metal corrosion inhibiting metal halides of the formula: WzMXy where M is a metal selected from the group Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb; X is a halide selected from F, Cl, Br and I; W is selected from H, to an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety; y is a numeral of from 4 to 6 depending on the metal halide; and z is a numeral of 1, 2 or 3.
Claims20
An alkaline composition having a pH of 9 or greater for stripping or cleaning integrated circuit substrates, comprising:
- (a) one or more bases;
- and
- (b) 0.05% to 10% by weight of one or more metal halide compounds of the formula:
- WzMXy
- where M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb;
- X is a halide selected from the group consisting of F, Cl, Br and I;
- W is selected from the group consisting of H, an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety;
- y is a numeral of from 4 to 6 depending on the metal halide;
- and z is a numeral of from 1, 2 or 3.
A method for cleaning semiconductor wafer substrates, comprising:
- contacting a semiconductor wafer substrate having a substrate surface for a time and at a temperature sufficient to clean unwanted contaminants and residues from said substrate surface with an alkaline composition having a pH of 9 or greater and comprising:
- (a) one or more bases;
- and
- (b) 0.5% to 10% by weight of the composition of one or more metal halide compounds of the formula:
- WzMXy
- where M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb;
- X is a halide selected from the group consisting of F, Cl, Br and I;
- W is selected from the group consisting of H, an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety;
- y is a numeral of from 4 to 6 depending on the metal halide;
- and z is a numeral of from 1, 2 or 3.
Dependencies are inferred from the claim text.