Electron emission device and electron emission display device using the same
AssigneeSamsung SDI Co., Ltd.
InventorsJin-Hui Cho, Sang-Jo Lee, Su-Bong Hong
Life of this patent
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Abstract
An electron emission device is disclosed. The electron emission device includes a resistance layer for electrically connecting a line electrode and isolate electrodes included in the cathode electrode. The cathode electrode can maintain a uniform voltage due to the resistance layer. A protection layer is located on the resistance layer. The protection layer prevents conductive elements contained in the resistance layer from diffusing over the protection layer. The protection layer also prevents the resistance layer from being oxidized.
Claims19
An electron emission device, comprising:
- a substrate;
- a cathode electrode located on the substrate;
- an electron emission unit electrically connected to the cathode electrode;
- and
- a gate electrode electrically insulated from the cathode electrode,
- wherein the cathode electrode comprises
- a first electrode having an opening,
- a second electrode located within the opening,
- a resistance layer configured to electrically connect the first and second electrodes, wherein the resistance layer contains a conductive element, and
- a protection layer, and
- wherein the protection layer is located on the resistance layer such that the conductive element does not diffuse beyond the protection layer, and wherein the resistance layer and protection layer are fully embedded in an insulating layer.
An electron emission display device, comprising:
- first and second substrates opposing each other;
- phosphor layers located on the second substrate;
- a cathode electrode located on the first substrate;
- an anode electrode located on the second substrate;
- an electron emission unit electrically connected to the cathode electrode;
- and
- a gate electrode electrically insulated from the cathode electrode
- wherein the cathode electrode comprises
- a first electrode having an opening,
- a second electrode located within the opening,
- a resistance layer configured to electrically connect the first and second electrodes and containing a material, wherein the material is configured to diffuse during a heating process, and
- a protection layer formed on the resistance layer and configured to at least partly block the diffusion, wherein the resistance layer and protection layer are fully embedded in an insulating layer.
A method of manufacturing an electron emission device, comprising:
- providing a substrate;
- providing a cathode electrode on the substrate, wherein the cathode electrode comprises
- a first electrode having an opening, and
- a second electrode located within the opening;
- providing a resistance layer on the cathode electrode so as to electrically connect the first and second electrodes;
- providing a protection layer on the resistance layer;
- fully embedding the resistance layer and protection layer in an insulating layer;
- and
- providing a gate electrode so as to be electrically insulated from the cathode electrode.
An electron emission device, comprising:
- a gate electrode;
- a cathode electrode configured to emit electrons based on a voltage difference between the gate and cathode electrodes;
- an electron emission unit formed on the cathode electrode;
- a resistance layer formed on the cathode electrode and at a side of the electron emission unit;
- a protection layer formed on the resistance layer;
- and
- an insulating layer formed on the protection layer,
- wherein the protection layer substantially completely covers the resistance layer, wherein the resistance layer contains a semiconductor material which is configured to diffuse during a thermal process, wherein the protection layer is configured to prevent the diffusion from penetrating into the insulating layer, and wherein the resistance layer is thinner than the electron emission unit.
Dependencies are inferred from the claim text.