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US 7,655,489 B2Granted
Monolithically-pumped erbium-doped waveguide amplifiers and lasers
AssigneeUniversity of Notre Dame du Lac
InventorsDouglas Hall, Mingjun Huang
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Abstract
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
Claims26
A method of doping an oxide, comprising:
- forming an InAlP oxide host on a substrate by controlling a composition of the oxide;
- broadening a photoluminescence spectral width value by incorporating Erbium into the InAlP oxide via ion implantation to form an Erbium-doped oxide layer;
- and
- annealing the substrate and the InAlP oxide.
1 more element
An Erbium-doped waveguide device, comprising:
- at least one InAlP oxide formed on a substrate, the InAlP oxide doped with Erbium after oxidation to minimize photoluminescence-quenching As complexes;
- and
- a lower semiconductor layer and an upper semiconductor layer, the upper and lower layers surrounding the Erbium-doped InAlP oxide to form an optical waveguide therein.
Dependencies are inferred from the claim text.