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US 7,655,385 B2Granted
Pattern formation method
AssigneePanasonic Corporation
InventorsMasayuki Endo, Masaru Sasago
Life of this patent
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Abstract
After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.
Claims7
A pattern formation method comprising the steps of:
- forming a film including a material of absorbing moisture on a resist film;
- performing pattern exposure by selectively irradiating said resist film with exposing light while supplying immersion solution onto said film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
1 more element
Dependencies are inferred from the claim text.