Methods of positioning and/or orienting nanostructures
AssigneeNanosys, Inc.
InventorsXiangfeng Duan, R. Hugh Daniels, Chunming Niu, Vijendra Sahi, James M. Hamilton, Linda T. Romano
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Abstract
Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.
Claims20
A method of making a nanowire based device, comprising:
- depositing a plurality of nanowires on at least a first region of a surface of a substrate;
- and
- forming at least first and second electrical contacts on the first region of the surface of the substrate such that at least a first nanowire of the plurality of nanowires is positioned in contact with both the first and second electrical contacts, wherein the plurality of nanowires are made from a material selected from the group comprising Si, Ge, Sn, Se, Te, P, Si—C, Si—Ge, Si—Sn, Ge—Sn, SiC, AlN/AlP/AlAs/AlSb, GaN/GaP/GaAs/GaSb, InN/InP/InAs/InSb, AlN/AlP/AlAs/AlSb, GaN/GaP/GaAs/GaSb, InN/InP/InAs/InSb, ZnO/ZnS/ZnSe/ZnTe, CdS/CdSe/CdTe, HgS/HgSe/HgTe, BeS/BeSe/BeTe/MgS/MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, AgF, AgCl, AgBr, AgI, BeSiN2, CaCN2, ZnGeP2, CdSnAs2, ZnSnSb2, CuGeP3, CuSi2P3, (Cu, Ag)(Al, Ga, In, Tl, Fe)(S, Se, Te)2, Si3N4, Ge3N4, Al2O3, (Al, Ga, In)2(S, Se, Te)3, or Al2CO or alloys thereof, wherein the first and second electrical contacts are separated from each other on the first surface of the substrate by a distance that is less than 50% of an average length of the plurality of nanowires.
A method of making a nanowire based device, comprising:
- depositing a plurality of nanowires on at least a first region of a surface of a substrate;
- and
- forming at least first and second electrical contacts on the first region of the surface of the substrate such that at least a first nanowire of the plurality of nanowires is positioned in contact with both the first and second electrical contacts, wherein the plurality of nanowires are made from a material selected from the group comprising Si, Ge, Sn, Se, Te, P, Si—C, Si—Ge, Si—Sn, Ge—Sn, SiC, AlN/AlP/AlAs/AlSb, GaN/GaP/GaAs/GaSb, InN/InP/InAs/InSb, AlN/AlP/AlAs/AlSb, GaN/GaP/GaAs/GaSb, InN/InP/InAs/InSb, ZnO/ZnS/ZnSe/ZnTe, CdS/CdSe/CdTe, HgS/HgSe/HgTe, BeS/BeSe/BeTe/MgS/MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, AgF, AgCl, AgBr, AgI, BeSiN2, CaCN2, ZnGeP2, CdSnAs2, ZnSnSb2, CuGeP3, CuSi2P3, (Cu, Ag)(Al, Ga, In, Tl, Fe)(S, Se, Te)2, Si3N4, Ge3N4, Al2O3, (Al, Ga, In)2(S, Se, Te)3, or Al2CO or alloys thereof, wherein the first and second electrical contacts are separated from each other on the first surface of the substrate by a distance that is less than 50% of an average length of the plurality of nanowires;
- and
- disposing third and fourth electrical contacts in a separate discrete region of the surface of the substrate such that at least one nanowire from the plurality of nanowires bridges and connects said at least third and fourth electrical contacts.
Dependencies are inferred from the claim text.