Discrete placement of radiation sources on integrated circuit devices
AssigneeInternational Business Machines Corporation
InventorsMichael S. Gordon, Nancy C. LaBianca, Kenneth P. Rodbell
Life of this patent
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Abstract
An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
Claims21
A method of forming an integrated circuit chip, comprising:
- forming solder bumps on a surface of said integrated circuit chip;
- and
- prior to bonding said integrated circuit chip to a module, forming a radiation-emitting layer over a selected region of a top surface of said integrated circuit chip by dispensing a liquid mixture comprising a polymer or resin and a radioactive material over said selected region, said region smaller than a whole of said top surface of said integrated circuit chip, said region including a circuit liable to temporary failure when struck by radiation generated by said radioactive material.
A method of an integrated circuit, comprising:
- forming a radiation-emitting layer over a selected region of a top surface of said integrated circuit chip by dispensing a liquid mixture comprising a polymer or resin and a radioactive material over said selected region, said region smaller than a whole of said top surface of said integrated circuit chip, said region including a circuit liable to temporary failure when struck by radiation generated by said radioactive material;
- forming a photoresist layer over said integrated circuit chip;
- forming an opening in said photoresist layer over said selected region;
- and
- dispensing said liquid mixture into said opening.
A method of forming an integrated circuit chip, comprising:
- forming a first radiation-emitting layer over an entire top surface of said integrated circuit chip by dispensing a liquid mixture comprising a first polymer or resin and a first radioactive material over said entire top surface of said integrated circuit chip;
- and
- photolithographically removing portions of said first radiation-emitting layer to form a first radiation-emitting island over a region of said integrated circuit chip, said region including a circuit liable to temporary failure when struck by radiation generated by said first radioactive material.
An integrated circuit, comprising:
- solder bumps on a surface of said integrated circuit chip;
- and
- a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, said radiation emitting layer comprising a first polymer or resin and a first radioactive material, said region smaller than a whole of said top surface of said integrated circuit chip, said region including a circuit that is liable to temporary failure when struck by radiation generated by said first radioactive material, a thickness of said radiation-emitting layer less than a height of said solder bumps.
A method, comprising:
- providing an integrated circuit chip having a functional circuit and a radiation-emitting layer containing a radioactive material formed over said functional circuit, said radiation-emitting layer containing a radioactive material, said radiation emitting-layer smaller than a whole of said top surface of said integrated circuit chip, said functional circuit liable to temporary failure when struck by radiation generated by said radioactive material;
- measuring a soft-error rate of said functional circuit;
- and
- adjusting operation of said functional circuit based on said measured soft-error rate of said functional circuit.
Dependencies are inferred from the claim text.