Nanophotonic devices in silicon
AssigneeCalifornia Institute of Technology
InventorsMichael J. Hochberg, Tom Baehr-Jones, Axel Scherer
Life of this patent
Estimating the term…
Abstract
Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants χ2 and χ3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed. Designs having responsivity of less than 1 volt-centimeter are described.
Claims48
An electro-optical modulator, comprising:
- a substrate having an insulating surface;
- a high index contrast slot waveguide adjacent said insulating surface, said high index contrast slot waveguide having at least two stripes defining said slot;
- a cladding adjacent said high index contrast slot waveguide, said cladding comprising a material that exhibits an enhanced nonlinear optical coefficient, at least some of said cladding being situated with said slot;
- an optical input of said electro-optical modulator configured to receive an optical signal as input;
- an optical output of said electro-optical modulator configured to provide a modulated optical signal as output;
- and
- an electrical signal source configured to apply a modulation signal to said high index contrast slot waveguide;
- said high index contrast slot waveguide and said cladding configured so that the responsivity is less than 1 volt-centimeter.
A method of optically processing light, comprising the steps of:
- providing an electro-optical modulator configured to have a responsivity of less than 1 V-cm comprising:
- a substrate having an insulating surface;
- a high index contrast slot waveguide adjacent said insulating surface, said high index contrast slot waveguide having at least two stripes defining said slot;
- a cladding adjacent said high index contrast slot waveguide, said cladding comprising a material that exhibits an enhanced nonlinear optical coefficient, at least some of said cladding being situated with said slot;
- an optical input of said electro-optical modulator configured to receive an optical signal as input;
- an optical output of said electro-optical modulator configured to provide a modulated optical signal as output;
- and
- an electrical signal source configured to apply a modulation signal to said high index contrast slot waveguide;
- applying an electrical signal from said electrical signal source to said high index contrast slot waveguide;
- impressing onto said structure as an input a light wave to be processed, said input light wave having at least one parameter characterizing said input light wave;
- and
- observing an optical output signal, said optical output signal having at least one parameter that is different from said at least one parameter characterizing said input light wave.
An apparatus for converting an electrical input signal to an optical output signal, comprising:
- a substrate having an insulating surface;
- a high index contrast slot waveguide adjacent said insulating surface, said high index contrast slot waveguide having input electrodes in electrical communication therewith;
- a cladding adjacent said high index contrast slot waveguide, said cladding comprising a material that exhibits an enhanced nonlinear optical coefficient;
- an optical input configured to receive an optical signal as input;
- a plurality of input electrodes configured to receive an electrical signal as input;
- and
- an optical output configured to provide a modulated optical signal as output;
- said high index contrast slot waveguide and said cladding configured so that a phase shift of substantially π radians in an optical output signal is generated when an electrical input signal having a magnitude of not more than 500 millivolts is applied to said plurality of input electrodes of said apparatus.
Dependencies are inferred from the claim text.