Method of forming oxide superconductor thick film
AssigneesDowa Electronics Materials Co., Ltd., Central Research Institute of Electric Power Industry
InventorsMasahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado
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Abstract
To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ (where −0.1≦a≦0.5) is formed on the first thick film.
Claims2
A method of forming an oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ where −0.1≦a≦0.5, on a surface of a body to be processed, the method comprising the steps of:
- providing a mixture of a compound oxide and Pb on the surface of the body to be processed, the compound oxide having a general formula Bi2Sr2Ca1Cu2OZ;
- burning the body to be processed on which the mixture is provided, to form a first thick film;
- and
- forming the oxide superconductor thick film expressed by the general formula (Bi, Pb)2+aSr2Ca2Cu3OZ where −0.1≦a≦0.5, on the first thick film.
Dependencies are inferred from the claim text.