UV light exposure for functionalization and hydrophobization of pure-silica zeolites

A zeolite film prepared by a method comprising:

• providing a support and a zeolite synthesis composition, the zeolite synthesis composition comprising a silica source and an organic template;
• forming a zeolite film on the support, wherein the zeolite film is derived from the zeolite synthesis composition and wherein total removal of the organic template is avoided;
• and thereafter
• subjecting said zeolite film to, substantially simultaneously, ultraviolet irradiation and thermal activation, wherein the ultraviolet radiation has a wavelength of from 170 nm to 250 nm, and wherein organic template is present when the zeolite film is subjected to ultraviolet radiation, whereby Si—OH bonds are broken and whereby Si—O—Si, Si—CH3 and/or Si—O—CH3 bonds are formed, whereby hydrophobicity of the zeolite film is increased.

A semiconductor device comprising a zeolite film, wherein the zeolite film is prepared by a method comprising:

• providing a support and a zeolite synthesis composition, the zeolite synthesis composition comprising a silica source and an organic template;
• forming a zeolite film on the support, wherein the zeolite film is derived from the zeolite synthesis composition and wherein total removal of the organic template is avoided;
• and thereafter
• subjecting said zeolite film to, substantially simultaneously, ultraviolet irradiation and thermal activation, wherein the ultraviolet radiation has a wavelength of from 170 nm to 250 nm, and wherein organic template is present when the zeolite film is subjected to ultraviolet radiation, whereby Si—OH bonds are broken and whereby Si—O—Si, Si—CH3 and/or Si—O—CH3 bonds are formed, whereby hydrophobicity of the zeolite film is increased.