Tapered hollow metallic microneedle array assembly and method of making and using the same
AssigneeBoard of Regents, The Univeristy of Texas System
InventorsKabseog Kim, Jeong-Bong Lee
Life of this patent
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Abstract
The present invention includes device, system, method of using and making a microneedle array including the steps of forming one or more pins on a substrate, depositing one or more layers on the one or more pins and the substrate, exposing a portion of the one or more pins, and separating the one or more pins from the one or more layers to form the hollow microneedle array.
Claims28
A method of making a hollow microneedle array comprising the steps of:
- depositing a first SU-8 layer on a top side of a substrate;
- exposing a bottom side of the substrate to a first UV emission, wherein the UV emission passes through the substrate into the first SU-8 layer to form a first exposed SU-8 area;
- applying a second SU-8 layer of to the first exposed SU-8 area;
- applying one or more masks to the bottom side of the substrate;
- exposing the bottom side of the substrate to a second UV emission, wherein the second UV emission passes through the one or more masks, the substrate and the first exposed SU-8 area to form one or more pins in the second SU-8 layer;
- remove one or more unexposed areas of the second SU-8 layer;
- depositing one or more coating layers on the one or more pins and the first SU-8 layer-to form one or more coated pins;
- removing a portion of the one or more coated pins;
- and
- separating the one or more coated pins from the one or more pins in the second SU-8 layer to form the hollow microneedle array.
The method of making a hollow microneedle array comprising the steps of:
- forming one or more pins on a substrate, wherein the step of forming one or more pins comprise
- applying a first resist layer to a top side of the substrate,
- masking a portion of the first resist layer,
- irradiating the first resist layer, wherein the unmasked portion of the first resist layer is irradiated to form a first optically cured resist layer,
- applying a second resist layer to the first optically cured resist layer,
- masking a portion of the second resist layer to form one or more masked areas and one or more unmasked areas in the second resist layer, and
- irradiating through the back side of the substrate and the backside of the first cured resist layer and into the one or more unmasked areas of the second resist layer to form one or more optically cured pins in the second resist layer;
- removing one or more uncured areas of the second resist layer;
- depositing one or more coating layers on the one or more optically cured pins and the first optically cured resist layer to form one or more coated pins;
- removing a portion of the one or more coated pins;
- and
- separating the one or more coated pins from the one or more optically cured pins and the first cured resist layer to form the hollow microneedle array.
A method of making a microneedle array comprising the steps of:
- depositing a first layer of SU-8 on a first side of a glass substrate;
- exposing a second side of the glass substrate to a first UV irrediation to form a first cured SU-8 area;
- applying a second layer of SU-8 to the exposed SU-8 area;
- applying one or more masks to the second side of a glass substrate;
- exposing the one or more masks to a second UV irrediation to induce the second layer of SU-8 to form one or more cured pins;
- removing the unexposed second layer of SU-8 to expose the one or more cured pins;
- depositing one or more coating layers on the one or more cured pins to form one or more coated pins, wherein the one or more coating layers comprise a conducting portion;
- a portion of the one or more coated pins;
- and
- separating the one or more coated pins from the one or more cured pins to form the hollow microneedle array.
Dependencies are inferred from the claim text.