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US 7,627,010 B2Granted
Semiconductor laser having Fabry-Perot resonator
AssigneeMitsubishi Electric Corporation
InventorTetsuya Yagi
Life of this patent
Estimating the term…
Abstract
A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.
Claims8
A semiconductor laser comprising:
- a Fabry-Perot resonator;
- and
- a first coating on a rear facet of the Fabry-Perot resonator, wherein the first coating has a first reflectance, which is substantially constant in a first wavelength range, the first wavelength range extending to a first wavelength from wavelengths shorter than the first wavelength, has a second reflectance that decreases monotonically to a minimum, third reflectance in a second wavelength range, the second wavelength range extending from the first wavelength to a second wavelength that is longer than the first wavelength, and has a third reflectance that is substantially constant at the third reflectance in a third wavelength range, the third wavelength range extending continuously from the second wavelength to wavelengths longer than the second wavelength, wherein the first wavelength is shorter than a wavelength at which gain of the semiconductor laser is maximized when the semiconductor laser operates at a lowest operating temperature.
A semiconductor laser comprising:
- a Fabry-Perot resonator;
- and
- a first coating on a rear facet of the Fabry-Perot resonator, wherein the first coating has a first reflectance, which is substantially constant in a first wavelength range, the first wavelength range extending to a first wavelength from wavelengths shorter than the first wavelength, has a second reflectance that decreases monotonically to a minimum, third reflectance in a second wavelength range, the second wavelength range extending from the first wavelength to a second wavelength that is longer than the first wavelength, and has a third reflectance that is substantially constant at the third reflectance in a third wavelength range, the third wavelength range extending continuously from the second wavelength to wavelengths longer than the second wavelength, wherein mirror loss of the Fabry-Perot resonator changes by at least 15 cm−1 over the second wavelength range.
A semiconductor laser comprising:
- a Fabry-Perot resonator;
- and
- a first coating on a front facet of the Fabry-Perot resonator, wherein the first coating has a first reflectance, which is substantially constant in a first wavelength range, the first wavelength range extending to a first wavelength from wavelengths shorter than the first wavelength, has a second reflectance that decreases monotonically to a minimum, third reflectance in a second wavelength range, the second wavelength range extending from the first wavelength to a second wavelength that is longer than the first wavelength, and has a third reflectance that is substantially constant at the third reflectance in a third wavelength range, the third wavelength range extending continuously from the second wavelength to wavelengths longer than the second wavelength, wherein mirror loss of the Fabry-Perot resonator changes by at least 15 cm−1 over the second wavelength range.
The semiconductor laser comprising:
- a Fabry-Perot resonator;
- and
- a first coating on a rear facet of the Fabry-Perot resonator, wherein the first coating has a first reflectance, which is substantially constant in a first wavelength range, the first wavelength range extending to a first wavelength from wavelengths shorter than the first wavelength, has a second reflectance that decreases monotonically to a minimum, third reflectance in a second wavelength range, the second wavelength range extending from the first wavelength to a second wavelength that is longer than the first wavelength, and has a third reflectance that is substantially constant at the third reflectance in a third wavelength range, the third wavelength range extending continuously from the second wavelength to wavelengths longer than the second wavelength, wherein the first wavelength is shorter than a wavelength at which gain of the semiconductor laser is maximized when the semiconductor laser operates at a lowest operating temperature.
Dependencies are inferred from the claim text.