Flash memory device with external high voltage supply

A semiconductor memory device selectably connectable to an external high voltage power supply, the semiconductor memory device comprising:

• a switch connected to external voltage supply signals for selectably coupling the external voltage supply signals to memory cells of the semiconductor memory device for memory operations thereof, the external voltage supply signals including a high voltage signal provided from the external high voltage power supply and an operational voltage signal;
• a detector connected to the external voltage supply signals for generating a timer activation signal in response to detecting an operational voltage power-on period;
• and
• a timing device coupled to the detector and the switch for signaling the switch to decouple the high voltage signal and the operational voltage signal from the memory cells in response to the timer activation signal and to recouple the high voltage signal and the operational voltage signal to the memory cells a time delay interval thereafter, the time delay interval determined in response to the high voltage signal.

A semiconductor package comprising:

• a semiconductor memory die including memory cells and connected to an operational voltage signal;
• and
• a high voltage power supply semiconductor die connected to the operational voltage signal for generating a high voltage signal, the high voltage power supply semiconductor die coupled to the semiconductor memory die to provide a high voltage signal to the semiconductor memory die for memory operations thereof, wherein the semiconductor memory die includes:
• a switch coupled to the high voltage power supply semiconductor die and the operational voltage signal to selectably provide the high voltage signal and the operational voltage signal to the memory cells for the memory operations thereof;
• a detector connected to the external voltage supply signals for generating a timer activation signal in response to detecting an operational voltage power-on period;
• and
• a timing device coupled to the detector and the switch for signaling the switch to decouple the high voltage signal and the operational voltage signal from the memory cells in response to the timer activation signal and for recoupling the high voltage signal and the operational voltage signal to the memory cells a time delay interval thereafter, the time delay interval determined in response to the high voltage signal.

An electronic device comprising:

• a controller for controlling operations of the electronic device;
• a memory coupled to the controller for storing information therein for utilization by the controller for controlling the operations of the electronic device;
• and
• a high voltage power supply external to the memory and providing a high voltage signal to the memory for high voltage memory operations thereof, wherein the memory includes:
• a switch coupled to the high voltage power supply semiconductor die and the operational voltage signal to selectably provide the high voltage signal and the operational voltage signal to the memory cells for the memory operations thereof;
• and
• a detector connected to the external voltage supply signals for generating a timer activation signal in response to detecting an operational voltage power-on period;
• and
• a timing device coupled to the detector and the switch for signaling the switch to decouple the high voltage signal and the operational voltage signal from the memory cells in response to the timer activation signal and for recoupling the high voltage signal and the operational voltage signal to the memory cells a time delay interval thereafter, the time delay interval determined in response to the high voltage signal.