Optimized phase change write method
AssigneeInternational Business Machines Corporation
InventorsMark Lamorey, Thomas Happ
Life of this patent
Estimating the term…
Abstract
A method and system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC). The method and system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.
Claims15
A method of writing data to a phase change random access memory or phase change memory (PCRAM) on an integrated circuit (IC), comprising:
- gating an array of phase change elements cells each including a phase change element (PCE) with a plurality of devices providing independent control of a row access and a column access to the PCRAM;
- pre-charging a column line (bit line) to a single predetermined level prior to enabling current flow to a corresponding selected phase change element;
- initiating a current flow in the phase change element with a row (word line) once the column (bit line) has been pre-charged to write data to the PCRAM cell;
- and
- terminating the current flow in the phase change element by disconnecting the column line (bit line).
A system for writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC or chip), which comprises:
- an array of phase change element (PCE) cells each including a variable resistor, and a plurality of devices providing independent control of a row access and a column access to the PCRAM;
- a voltage source coupled to the PCRAM;
- the IC directing the voltage source to pre-charge the column line to a predetermined level prior to the IC enabling a current flow to a corresponding selected phase change element;
- the IC initiating a current flow in the phase change element with a row (word line) once the column (bit line) has been pre-charged to write data to the PCRAM cell;
- and
- the IC terminating the current flow in the phase change element by disconnecting the column line.
Dependencies are inferred from the claim text.