Current induced magnetoresistance device
AssigneeKorea Institute of Science and Technology
InventorsKyung-Ho Shin, Nguyen Thi Hoang Yen, Hyun-Jung Yi
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Abstract
Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.
Claims13
A current induced switching magnetoresistance device comprising:
- a multilayered structure consisted of a first ferromagnetic layer, a non-ferromagnetic layer and a second ferromagnetic layer;
- an upper electrode provided in the first ferromagnetic layer;
- an antiferromagnet pinned at the second ferromagnetic layer;
- and
- a lower electrode at the lower part of the antiferromagnet, wherein the second ferromagnetic layer is embedded with a nano oxide layer;
- wherein the magnetization direction of the first ferromagnetic layer can be switched depending on the current induced, and the magnetization direction of the second ferromagnetic layer can be fixed by the antiferromagnetic layer.
A current induced switching magnetoresistance device comprising:
- a multilayered structure including a first ferromagnetic layer, a non-ferromagnetic layer under the first ferromagnetic layer and a second ferromagnetic layer under the non-ferromagnetic layer;
- an upper electrode on the first ferromagnetic layer;
- an anti-ferromagnetic layer under the second ferromagnetic layer;
- and
- a lower electrode under the antiferromagnet layer,
- wherein the lower electrode is in contact with at least a part of the second ferromagnetic layer, and wherein the second ferromagnetic layer includes a nano oxide layer.
Dependencies are inferred from the claim text.