Method and media for improving ferroelectric domain stability in an information storage device
AssigneeNanochip, Inc.
InventorsValluri Ramana Rao, Li-Peng Wang, Qing Ma, Byong Man Kim
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AssigneeNanochip, Inc.
InventorsValluri Ramana Rao, Li-Peng Wang, Qing Ma, Byong Man Kim
Estimating the term…
A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.
A media for an information storage device comprising:
An information storage device comprising:
A media for an information storage device comprising:
A media for an information storage device comprising:
Dependencies are inferred from the claim text.