Dynamic random access memory and method for accessing same
AssigneeInnolux Display Corp.
InventorShou-Ting Yan
Life of this patent
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Abstract
An exemplary dynamic random access memory includes a first transistor (210), a second transistor (220) and a comparator (230). The first transistor includes a first gate electrode (211), a first source electrode (213) and a first drain electrode (215). The second transistor includes a second gate electrode (221), a second source electrode (223) and a second drain electrode (225). The first source electrode is connected with the second source electrode. The first drain electrode is an input terminal for inputting a message. The comparator is connected to the second drain electrode, and preconfigured with a reference current. The comparator compares the reference current and a current through the second drain electrode to define a state of the current read from the comparator.
Claims15
A dynamic random access memory comprising:
- a first transistor having a first gate electrode, a first source electrode and a first drain electrode, the first drain electrode being configured as a first input voltage terminal;
- a second transistor having a second gate electrode, a second source electrode and a second drain electrode, wherein the second source electrode is connected to the first source electrode of the first transistor;
- and
- a comparator connected to the second drain electrode, and preconfigured with a reference current;
- wherein a first parasitic capacitor is formed between the first gate electrode and the first source electrode of the first transistor, and the first parasitic capacitor retains the input voltage for a predetermined period of time;
- and
- a first input voltage or a second input voltage is applied to the first drain electrode when the first transistor is in an on-state and the second transistor is in an off-state;
- and
- a second voltage which is greater than the first and second input voltages is applied to the second drain electrode when the first transistor is in an off-state and the second transistor is in an on-state.
An access method for a dynamic random access memory, the dynamic random access memory comprising a first transistor having a first source electrode and a first drain electrode, a second transistor having a second source electrode and a second drain electrode, and a comparator preconfigured with a reference current, the method comprising:
- inputting a first voltage in the first source electrode of the first transistor and the second source electrode of the second transistor through the first drain electrode of the first transistor as the first transistor is turned on;
- inputting a second voltage to the second drain electrode of the second transistor as the second transistor is turned off;
- generating a current between the second drain electrode and the second source electrode of the second transistor as the second transistor is turned on;
- and
- comparing the current and the reference current of the comparator to define an output state of the comparator;
- wherein a time period begins shortly prior to the time the second transistor is turned on, and the time period is provided for raising the second input voltage to a predetermined value.
Dependencies are inferred from the claim text.