Photoelectric conversion layer stack type color solid-state imaging device

A color solid state imaging device comprising a semiconductor substrate and plural unit pixels of two kinds that are a first kind and a second kind arranged like a two-dimensional array, in which each unit pixel of the first kind consists of a pixel of a first color and a pixel of a second color for detecting incident light quantities of the first color and the second color, respectively, and each unit pixel of the second kind consists of a pixel of the first color and a pixel of a third color for detecting incident light quantities of the first color and the third color, respectively, the pixels of the first color are provided in a photoelectric conversion layer provided above the semiconductor substrate, the pixels of the second color and the pixels of the third color are formed by respective of photodiodes provided in the semiconductor substrate, and detection signals of the pixels of the first color, the second color, and the third color are read-out by sets of signal reading circuits which are provided for the respective unit pixels,

• the color solid state imaging device comprising an output signal processing section which comprises:
• signal memory means provided for respective columns of the unit pixels, for holding signals read-out from the pixels of the same color of the same unit pixel row, respectively;
• and
• row-direction scanning control means for switching between an all pixels reading operation in which the signals held by the respective signal memory means are read out individually and output to the outside and a sum reading operation in which, among the signals held by the respective signal memory means, signals held by signal memory means corresponding to adjoining unit pixels are read out simultaneously and output to the outside.