Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator

A method for manufacturing a semiconductor device, comprising:

• processing a semiconductor substrate by a processing apparatus;
• controlling operation of the processing apparatus by transmitting a start signal and a stop signal to the processing apparatus by a process control apparatus;
• and
• monitoring a state of the processing apparatus during processing of the semiconductor substrate, integrating internal information of the processing apparatus from the start signal to the stop signal and internal information of the processing apparatus after the stop signal, in response to the start signal and the stop signal to the processing apparatus, executing a simulation of a semiconductor manufacturing process, and estimating processing progress of the semiconductor substrate by the processing apparatus,
• wherein in response to a start signal transmitted from a process control apparatus to the processing apparatus, a real time simulator initiates calculation of the quality of the semiconductor device, based on the internal information transmitted from the processing apparatus in real time, and
• wherein the real time simulator includes an oxide film thickness calculation section adapted to calculate an oxide film thickness continuously in real time based on apparatus internal information from a time of stopping an oxidation process, until a predetermined time elapses.